Introducing the new Intel® Optane™ Memory H10 with Solid State Storage which combines two breakthrough technologies, Low-latency Intel® Optane™ technology and high-density Intel® QLC 3D NAND in a single M.2 2280 form factor.
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Additional information
| Brand | Intel |
|---|---|
| Condition | Brand New |
| Capacity | 256GB |
| Sequential Bandwidth - 100% Read (up to) | 1450 MB/s |
| Sequential Bandwidth - 100% Write (up to) | 650 MB/s |
| Random Read (8GB Span) (up to) | 230000 IOPS |
| Random Write (8GB Span) (up to) | 150000 IOPS |
| Latency - Read | 8 µs |
| Latency - Write | 30 µs |
| Shock (Operating and Non-Operating) | 1000 G / 0.5 ms and 1500 G / 0.5 ms |
| Operating Temperature Range | 0°C to 70°C |
| Weight | Less than 10 grams |
| Form Factor | M.2 22 x 80mm |
| Interface | PCIe 3.0 x4, NVMe |
| Enhanced Power Loss Data Protection | Yes |
| End-to-End Data Protection | Yes |
| Intel® Rapid Start Technology | Yes |
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